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Critical voltage growth rate when initiating the ultrafast impact ionization front in a diode structure

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The threshold of the voltage-rise rate was estimated; this threshold should be achieved in a reversely biased diode structure to excite an impact ionization front propagating with a velocity higher than saturated carrier drift velocities.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. M. Minarskii & P. B. Rodin

Authors
  1. A. M. Minarskii
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  2. P. B. Rodin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 692–694.

Original Russian Text Copyright © 2000 by Minarski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Rodin.

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Minarskii, A.M., Rodin, P.B. Critical voltage growth rate when initiating the ultrafast impact ionization front in a diode structure. Semiconductors 34, 665–667 (2000). https://doi.org/10.1134/1.1188051

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  • DOI: https://doi.org/10.1134/1.1188051

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