Abstract
The photosensitive a-Si:H/p-CuInSe2 heterostructures were obtained for the first time by the deposition of hydrogenated amorphous silicon on polycrystalline p-CuInSe2 substrates. The photoelectric properties of the new system were studied. The conclusion was drawn on the prospects of the application of this system for solar and linearly polarized radiation photoconvertors.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 685–688.
Original Russian Text Copyright © 2000 by Nikolaev, V. Rud’, Yu. Rud’, Terukov.
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Nikolaev, Y.A., Rud’, V.Y., Rud’, Y.V. et al. Photoelectric phenomena in a-Si:H/p-CuInSe2 heterostructures. Semiconductors 34, 658–661 (2000). https://doi.org/10.1134/1.1188049
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DOI: https://doi.org/10.1134/1.1188049