Abstract
Photoluminescence (PL), Raman scattering, and carrier transport have been studied for the first time in porous GaAs prepared on (111) oriented wafers of n-type crystalline GaAs (faces A and B). Peaks of the main PL band from faces A and B were observed at 1.82 and 1.88 eV, respectively. The electron drift mobility was found to be ∼4×10−4 cm2 V−1 s−1. The nanocrystallite size in porous GaAs was determined both from PL spectra and from the Raman shift. The obtained values are close or equal to 6–8 nm.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 757–761.
Original Russian Text Copyright © 2000 by Averkiev, Kazakova, Lebedev, Rud’, Smirnov, Smirnova.
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Averkiev, N.S., Kazakova, L.P., Lebedev, É.A. et al. Optical and electrical properties of porous gallium arsenide. Semiconductors 34, 732–736 (2000). https://doi.org/10.1134/1.1188063
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DOI: https://doi.org/10.1134/1.1188063