Abstract
The Hall mobility was studied in the n-CdxHg1−x Te crystals subjected to dynamic ultrasonic stressing (W US≤104 W/m2, f=5–7 MHz). It was found that, in field of the ultrasonic deformation, an increase in the carrier mobility in the impurity conduction region (T<120 K) and a decrease in the intrinsic conduction region (T>120 K) occurred in all tested samples. In this case, the magnitude of the sonic-stimulated variation in μH increases with decreasing structural perfection of a crystal. Different mechanisms of ultrasonic influence on μH with regard to scattering by optical phonons, ionized impurities, and alloy potential are analyzed, with the current flow conditions in the crystal taken into account. It is shown that, in the impurity conduction region, the main cause of the sonic-stimulated increase of the Hall mobility is the smoothing of the macroscopic intracrystalline potential that results from the inhomogeneity of the crystals. In the intrinsic conduction region, a decrease in mobility is caused by an increase in the intensity of scattering by the optical phonons.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
K. A. Myslivets and Ya. M. Olikh, Fiz. Tverd. Tela (Leningrad) 32, 2912 (1990) [Sov. Phys. Solid State 32, 1692 (1990)].
P. I. Baranskii, A. E. Belyaev, S. M. Komirenko, and N. V. Shevchenko, Fiz. Tverd. Tela (Leningrad) 32, 2159 (1990) [Sov. Phys. Solid State 32, 1257 (1990)].
A. V. Lyubchenko and Ya. M. Olikh, Fiz. Tverd. Tela (Leningrad) 37, 2505 (1985) [Sov. Phys. Solid State 27, 1500 (1985)].
O. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina, Ukr. Fiz. Zh. 44, 618 (1999).
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 410 (1999) [Semiconductors 33, 398 (1999)].
A. I. Vlasenko, A. V. Lyubchenko, and E. A. Sal’kov, Ukr. Fiz. Zh. 25, 1318 (1980).
Y. Y. Dubowski, T. Dietl, W. Szymanska, and R. R. Galaska, J. Phys. Chem. Solids 42, 351 (1981).
W. Szymanska and T. Dietl, J. Phys. Chem. Solids 39, 1025 (1978).
A. I. Vlasenko, K. R. Kurbanov, A. V. Lyubchenko, and E. A. Sal’kov, Ukr. Fiz. Zh. 25, 1392 (1980).
S. G. Gasan-zade, Optoélektron. Poluprovodn. Tekh. 33, 91 (1998).
A. I. Vlasenko, V. V. Gorbunov, and A. V. Lyubchenko, Ukr. Fiz. Zh. 29, 423 (1984).
I. R. Gorokhovskii, A. K. Laurinavichyus, Yu. K. Pozhela, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 21, 1998 (1987) [Sov. Phys. Semicond. 21, 1211 (1987)].
P. N. Gorlei and V. A. Shenderovskii, Variational Methods in the Kinetic Theory (Naukova Dumka, Kiev, 1992).
J. Kossut, Phys. Status Solidi B 86, 593 (1978).
D. Chattopadhyay and B. R. Nag, Phys. Rev. B 12, 5676 (1975).
L. Makowski and M. Glicksman, J. Phys. Chem. Solids 34, 487 (1973).
Y. Y. Dobowski, Phys. Status Solidi B 85, 663 (1978).
K. C. Hass, H. Ehrenreich, and B. Velicky, Phys. Rev. B 27, 1088 (1983).
P. Moravec, R. Grill, J. Franc, et al., Proc. SPIE 3890, 307 (1999).
F. J. Bartoli, C. A. Hoffman, and J. R. Meyer, J. Vac. Sci. Technol. A 1, 1669 (1983).
M. A. Kinch, M. J. Brau, and A. Simmons, J. Appl. Phys. 44, 1649 (1973).
M. K. Sheinkman and A. Ya. Shik, Fiz. Tekh. Poluprovodn. (Leningrad) 10, 209 (1976) [Sov. Phys. Semicond. 10, 128 (1976)].
H. Oszwaldowski, J. Phys. Chem. Solids 46, 791 (1985).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 670–676.
Original Russian Text Copyright © 2000 by Vlasenko, Olikh, Savkina.
Rights and permissions
About this article
Cite this article
Vlasenko, A.I., Olikh, Y.M. & Savkina, R.K. Charge carrier mobility in n-CdxHg1−x Te crystals subjected to dynamic ultrasonic stressing. Semiconductors 34, 644–649 (2000). https://doi.org/10.1134/1.1188046
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1188046