Abstract
The special features of redistribution of phosphorus implanted into silicon wafers with a high concentration of boron (N B=2.5×1020 cm−3) were studied. It is shown that, in silicon initially doped heavily with boron, the broadening of concentration profiles of phosphorus as a result of postimplantation annealing for 1 h in the temperature range of 900–1150°C is significantly less than in the case of lightly doped silicon. The results are interpreted in terms of the impurity-impurity interaction with the formation of stationary boron-phosphorus pairs. The binding energy of boron-phosphorus complexes in silicon was estimated at 0.6–0.8 eV.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 655–659.
Original Russian Text Copyright © 2000 by Tishkovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Obodnikov, Taskin, Feklistov, Seryapin.
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Tishkovskii, E.G., Obodnikov, V.I., Taskin, A.A. et al. Redistribution of phosphorus implanted into silicon doped heavily with boron. Semiconductors 34, 629–633 (2000). https://doi.org/10.1134/1.1188043
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DOI: https://doi.org/10.1134/1.1188043