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Investigation of the influence of external effects on the behavior of gold impurity in silicon

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

Properties of gold atoms in silicon and the change of their energy levels under uniform pressure are investigated. The investigations demonstrated that the band gap of silicon varies under the influence of pressure (P) and temperature (T) with a rate ∂E/∂P=−1.5×10−11 eV/Pa and ∂E/∂T=−3.2×10−6 eV/K.

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Authors and Affiliations

  1. Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

    S. Z. Zainabidinov, O. O. Mamatkarimov, I. G. Tursunov & U. A. Tuichiev

Authors
  1. S. Z. Zainabidinov
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  2. O. O. Mamatkarimov
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  3. I. G. Tursunov
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  4. U. A. Tuichiev
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 641–643.

Original Russian Text Copyright © 2000 by Za\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)nabidinov, Mamatkarimov, Tursunov, Tu\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)chiev.

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Zainabidinov, S.Z., Mamatkarimov, O.O., Tursunov, I.G. et al. Investigation of the influence of external effects on the behavior of gold impurity in silicon. Semiconductors 34, 615–617 (2000). https://doi.org/10.1134/1.1188039

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  • DOI: https://doi.org/10.1134/1.1188039

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