Application of eddy current technique to vertical bridgman growth of CdZnTe R. ShettyC. K. ArdJ. P. Wallace OriginalPaper Pages: 1134 - 1138
Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices C. T. ElliottN. T. GordonN. E. Metcalfe OriginalPaper Pages: 1139 - 1145
Minimally cooled heterojunction laser heterodyne detectors in metalorganic vapor phase epitaxially grown Hg1-xCdxTe C. T. ElliottN. T. GordonN. E. Metcalfe OriginalPaper Pages: 1146 - 1150
Negative diffusion capacitance in auger-Suppressed HgCdTe heterostructure diodes T. J. PhillipsN. T. Gordon OriginalPaper Pages: 1151 - 1156
Advanced magneto-transport characterization of LPE-grown Hg1-xCdx Te by quantitative mobility spectrum analysis J. R. MeyerC. A. HoffmanP. K. Liao OriginalPaper Pages: 1157 - 1164
SIMS characterization of HgCdTe and related II-VI compounds Jack ShengLarry WangGayle E. Lux OriginalPaper Pages: 1165 - 1171
Ion drift in Cd-rich HgCdTe crystals J. F. BarbotB. O. WartlickC. Blanchard OriginalPaper Pages: 1172 - 1175
Recent progress on HgCdTe at the national laboratory for infrared physics in china Junhao ChuDingyuan Tang OriginalPaper Pages: 1176 - 1182
Trace copper measurements and electrical effects in LPE HgCdTe J. P. TowerS. P. TobinH. F. Arlinghaus OriginalPaper Pages: 1183 - 1187
Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality S. SenC. S. LiangH. F. Arlinghaus OriginalPaper Pages: 1188 - 1195
Magnetophonon oscillations in the transverse and longitudinal magnetoresistance of Hg1−xCdxTe J. BaaksC. L. LittlerM. Bruder OriginalPaper Pages: 1196 - 1202
Magnetoluminescence properties of Hg1−xCdxTe epitaxial layers and superlattice structures grown by metalorganic molecular beam epitaxy T. K. TranA. ParikhU. Muller OriginalPaper Pages: 1203 - 1208
Growth and characterization of inTISb for IR-detectors N. H. KaramR. SudharsananM. A. Dodd OriginalPaper Pages: 1209 - 1214
Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements J. S. KimD. G. SeilerM. B. Reine OriginalPaper Pages: 1215 - 1220
Study of the charge collection efficiency of CdZnTe radiation detectors Y. NemirovskyA. RuzinJ. Gorelik OriginalPaper Pages: 1221 - 1231
Application of II-VI materials to nuclear medicine H. Bradford Barber OriginalPaper Pages: 1232 - 1240
Drift mobility and photoluminescence measurements on high resistivity Cd1−xZnxTe crystals grown from Te-Rich solution K. SuzukiS. SetoK. Imai OriginalPaper Pages: 1241 - 1246
Photon assisted growth of nitrogen-doped CdTe and the effects of hydrogen incorporation during growth Zhonghai YuS. L. BuczkowskiM. Richards-Babb OriginalPaper Pages: 1247 - 1253
Comparison of HgTe materials grown in (100), (110), (111), and (211) Orientations Srinivasan KrishnamurthyA. -B. ChenA. Sher OriginalPaper Pages: 1254 - 1259
Comparison of the diffusion of Hg into CdTe and Hg0.8Cd0.2Te M. U. AhmedE. D. JonesN. M. Stewart OriginalPaper Pages: 1260 - 1265
Enhancement of the steady state minority carrier lifetime in HgCdTe photodiode using ECR plasma hydrogenation Han JungHee Chul LeeChoong-Ki Kim OriginalPaper Pages: 1266 - 1269
Dry etching of Hg1−xCdxTe using CH4/H2/Ar/N2 electron cyclotron resonance plasmas Robert C. KellerM. Seelmann-EggebertH. J. Richter OriginalPaper Pages: 1270 - 1275
Growth of fully doped Hg1−xCdxTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures C. D. MaxeyC. L. JonesC. T. Elliott OriginalPaper Pages: 1276 - 1285
HgCdTe/CdZnTe P-I-N high-energy photon detectors W. J. HamiltonD. R. RhigerR. E. Mills OriginalPaper Pages: 1286 - 1292
Interface formation between deposited Sn and Hg0.8Cd0.2Te H. ZimmermannRobert C. KellerM. Seelmann-Eggebert OriginalPaper Pages: 1293 - 1299
P-Type doping with arsenic in (211)B HgCdTe grown by MBE P. S. WijewarnasuriyaS. S. YooS. Sivananthan OriginalPaper Pages: 1300 - 1305
Synchrotron X-Ray photoconductor detector arrays made on MBE grown CdTe S. S. YouB. RodricksP. A. Montano OriginalPaper Pages: 1306 - 1311
Characteristics and uniformity of group V implanted and annealed HgCdTe heterostructure L. O. BubulacJ. BajajW. V. Mc Levige OriginalPaper Pages: 1312 - 1317
CdZnTe photodiode arrays for medical imaging R. SudharsananT. ParodosN. H. Karam OriginalPaper Pages: 1318 - 1322
Material inhomogeneities in Cd1-xZnxTe and their effects on large volume gamma-ray detectors J. M. Van ScyocJ. C. LundT. E. Schlesinger OriginalPaper Pages: 1323 - 1327
Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes P. MitraY. L. TyanM. B. Reine OriginalPaper Pages: 1328 - 1335
Modeling ion implantation of HgCdTe H. G. RobinsonD. H. MaoC. R. Helms OriginalPaper Pages: 1336 - 1340
Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy T. J. De LyonR. D. RajavelG. M. Venzor OriginalPaper Pages: 1341 - 1346
Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates K. ShigenakaK. MatsushitaH. Wada OriginalPaper Pages: 1347 - 1352
Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing K. MaruyamaH. NishinoH. Wada OriginalPaper Pages: 1353 - 1357
Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition H. EbeT. OkamotoH. Wada OriginalPaper Pages: 1358 - 1361
Metalorganic vapor phase epitaxy of (100) CdZnTe layers using diisopropylzinc source K. YasudaK. KawamotoH. Maeba OriginalPaper Pages: 1362 - 1365
Pb1−xSnxSe-on-Si LWIR sensor arrays and thermal imaging with JFET/CMOS read-out H. ZoggA. FachW. Buttler OriginalPaper Pages: 1366 - 1370
In situ sensors for monitoring and control in molecular beam epitaxial growth of Hg1−xCdxTe M. J. BevanW. M. DuncanH. D. Shih OriginalPaper Pages: 1371 - 1374
Key performance-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes M. C. ChenR. S. ListH. F. Schaake OriginalPaper Pages: 1375 - 1382
Annealing studies of undoped Hg1−xMnx Te bulk crystals at high temperatures Susan W. KutcherT. O. PoehlerP. Becla OriginalPaper Pages: 1383 - 1387
Mercury cadmium telluride-based resonant cavity light emitting diode J. L. PautratE. HadjiN. Magnea OriginalPaper Pages: 1388 - 1393
Uniform low defect density molecular beam epitaxial HgCdTe J. BajajJ. M. AriasL. J. Kozlowski OriginalPaper Pages: 1394 - 1401
Growth of high quality CdTe on Si substrates by molecular beam epitaxy L. A. AlmeidaY. P. ChenS. -C. Y. Tsen OriginalPaper Pages: 1402 - 1405
In-situ spectroscopic ellipsometry of HgCdTe J. D. BensonA. B. CornfeldJohn A. Woollam OriginalPaper Pages: 1406 - 1410
Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays R. D. RajavelD. JambaS. M. Johnson OriginalPaper Pages: 1411 - 1415