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Ion drift in Cd-rich HgCdTe crystals

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Abstract

Ion drift in the electric field of a depleted region has been studied at about room temperature in intentionally Cu-doped p-type Hg0.3Cd0.7 bulk materials. Capacitance-voltage measurements have mainly been used to investigate the drift of interstitial copper. Diffusion data of copper has been obtained using classical theoretical models based on the dissociation-formation of acceptordonor complexes (AsDi. The possibility of junction creation by this ion manipulation under a strong electric field is discussed.

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Authors and Affiliations

  1. Laboratoire de Métalllurgie Physique, Université de Poitiers, SP2MI-Bd3, Téléport 2, BP179, 86960, Futuroscope Cedex, France

    J. F. Barbot, B. O. Wartlick, L. F. Pinhède & C. Blanchard

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  1. J. F. Barbot
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  2. B. O. Wartlick
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  3. L. F. Pinhède
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  4. C. Blanchard
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Barbot, J.F., Wartlick, B.O., Pinhède, L.F. et al. Ion drift in Cd-rich HgCdTe crystals. J. Electron. Mater. 25, 1172–1175 (1996). https://doi.org/10.1007/BF02655004

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  • DOI: https://doi.org/10.1007/BF02655004

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