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Dry etching of Hg1−xCdxTe using CH4/H2/Ar/N2 electron cyclotron resonance plasmas

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Abstract

An approach is presented which eliminates the problems caused by hydrocarbon polymer deposition during etching Hg1-x CdxTe with CH4/H2 based plasmas. We find that the addition of N2 to the plasma inhibits polymer deposition in the chamber and on the sample. We speculate that atomic nitrogen formed from N2 in the plasma has several beneficial effects: the elimination of polymer precursors, the reduction of the atomic hydrogen concentration, and a potential increase of methyl radical concentration. Evidence for the reaction between the nitrogen and the polymer precursors is presented. It is also demonstrated that the addition of N2 to CH4/H2 based electron cyclotron resonance (ECR) plasmas used to etch HgCdTe eliminates the roughness normally formed during etching and results in a steadier etch rate.

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Author notes

  1. M. Seelmann-Eggebert

    Present address: Corporate Research Division, Texas Instruments, 75265, Dallas, TX

Authors and Affiliations

  1. Fraunhofer Institut für Angewandte Festkörperphysik, 79108, Freiburg, Germany

    Robert C. Keller, M. Seelmann-Eggebert & H. J. Richter

Authors
  1. Robert C. Keller
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  2. M. Seelmann-Eggebert
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  3. H. J. Richter
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Keller, R.C., Seelmann-Eggebert, M. & Richter, H.J. Dry etching of Hg1−xCdxTe using CH4/H2/Ar/N2 electron cyclotron resonance plasmas. J. Electron. Mater. 25, 1270–1275 (1996). https://doi.org/10.1007/BF02655019

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  • DOI: https://doi.org/10.1007/BF02655019

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