Abstract
We report the development, optimization, and testing of an advanced quantitative mobility spectrum analysis (QMSA) technique for determining free electron and hole densities and mobilities from field-dependent Hall and resistivity data. Application to temperature-dependent data for a series of 25 LPE-grown n-type and p-type Hg1−xCdxTe samples confirms that the fully automated procedure yields accurate and reliable results for all classes of samples, and also has greater sensitivity to minority carrier concentrations than previous mixed-conduction analysis methods. The QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor materials and devices.
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Meyer, J.R., Hoffman, C.A., Bartoli, F.J. et al. Advanced magneto-transport characterization of LPE-grown Hg1-xCdx Te by quantitative mobility spectrum analysis. J. Electron. Mater. 25, 1157–1164 (1996). https://doi.org/10.1007/BF02655002
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DOI: https://doi.org/10.1007/BF02655002