Abstract
Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg1−xCdxTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (Eg ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 102 m2Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10−4 of the mass of a free electron.
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Kim, J.S., Seiler, D.G., Lancaster, R.A. et al. Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements. J. Electron. Mater. 25, 1215–1220 (1996). https://doi.org/10.1007/BF02655011
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DOI: https://doi.org/10.1007/BF02655011