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Interface formation between deposited Sn and Hg0.8Cd0.2Te

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Abstract

The structure of the interface formed by the reaction of deposited Sn on Hg0.78Cd0.2Te(lll)B was investigated by hemispherically scanned x-ray photo-electron spectroscopy including x-ray photoelectron diffraction (XPD). The interface formation was found to proceed as follows: At the onset of Sn deposition, Hgis expelled and substituted by Sn in the topmost monolayer of the Hg0 78Cd0 22Te lattice while the zinc-blende structure of the original surface is maintained. With further Sn deposition (and further loss of Hg), an epitaxial layer of cubic SnTe (with inclusions of CdTe) was found to grow. At room temperature, the SnTe growth stopped after a few monolayers, and the epitaxial growth of cubic a-Sn was observed to start on top of it. At elevated deposition temperatures, the SnTe intermediate layer continued to grow up to several 100dgA.

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Authors and Affiliations

  1. Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, Germany

    H. Zimmermann, Robert C. Keller, P. Meisen, H. J. Richter & M. Seelmann-Eggebert

  2. Texas Instruments Incorporated, 75265, Dallas, TX

    P. Meisen

Authors
  1. H. Zimmermann
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  2. Robert C. Keller
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  3. P. Meisen
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  4. H. J. Richter
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  5. M. Seelmann-Eggebert
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Zimmermann, H., Keller, R.C., Meisen, P. et al. Interface formation between deposited Sn and Hg0.8Cd0.2Te. J. Electron. Mater. 25, 1293–1299 (1996). https://doi.org/10.1007/BF02655022

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  • DOI: https://doi.org/10.1007/BF02655022

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