Abstract
Growth characteristics of (100) Cd1−xZnxTe (CZT) have been studied using metalorganic vapor phase epitaxy. CZT layers were grown on (100) GaAs substrates using diisopropylzinc (DiPZn), dimethylcadmiun (DMCd), and diethyltelluride (DETe) as precursors. Growths were carried out in the temperature range from 375 to 450°C. Since DiPZn has lower vapor pressure than DMCd, CZT layers with Zn composition below 0.06 were grown with good compositional control. Layers with uniform Zn composition and thickness over an area of 10 × 15 mm2 were grown. Enhancement of CZT growth rate was observed when a small amount of DiPZn is introduced under fixed flows of DMCd and DETe. Zn composition increases abruptly for further increase of DiPZn flow rate, where growth rate decreases. Growth mechanisms for the above growth conditions were also discussed.
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Yasuda, K., Kawamoto, K., Maejima, T. et al. Metalorganic vapor phase epitaxy of (100) CdZnTe layers using diisopropylzinc source. J. Electron. Mater. 25, 1362–1365 (1996). https://doi.org/10.1007/BF02655034
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DOI: https://doi.org/10.1007/BF02655034