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Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates

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Abstract

Orientation dependence of HgCdTe epilayers grown by MOCVD on Si substrates was studied. Substrate orientation is considered to be one of the most sensitive factors to enable hetero-epitaxial growth on silicon substrates, especially in the case of a low temperature growth process. The present work was carried out with characterized features of a low temperature process for HgCdTe growth on Si and using a thin CdTe buffer layer. The (100), (100) misoriented toward [110], (311), (211), (111), and (331) oriented Si substrates were used in the present work. The best results were obtained on (211)Si substrates with an x-ray full width at half maximum of 153 arc sec for a 5 (im thickness HgCdTe layer and 69 arc sec for a 10 um thickness layer. It was found that the effective lattice mismatch of CdTe/Si heterosystem was reduced to 0.6% (for the 611 lattice spacing of CdTe and 333 spacing of Si) in the case of (133)CdTe/(211)Si.

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Author notes

  1. M. Uchikoshi

    Present address: Kumamoto Polytechnic College, Kumamoto, Japan

Authors and Affiliations

  1. Materials and Devices Research Laboratories, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, 210, Kawasaki, Japan

    K. Shigenaka, K. Matsushita, L. Sugiura, F. Nakata & K. Hirahara

  2. Second Research Center, TRDI, Japan Defense Agency, 1-2-24, Ikejiri, Setagaya, 154, Tokyo, Japan

    M. Uchikoshi, M. Nagashima & H. Wada

  3. R&D Center from Komukai Works, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, 210, Kawasaki, Japan

    L. Sugiura

Authors
  1. K. Shigenaka
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  2. K. Matsushita
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  3. L. Sugiura
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  4. F. Nakata
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  5. K. Hirahara
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  6. M. Uchikoshi
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  7. M. Nagashima
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  8. H. Wada
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Shigenaka, K., Matsushita, K., Sugiura, L. et al. Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates. J. Electron. Mater. 25, 1347–1352 (1996). https://doi.org/10.1007/BF02655031

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  • DOI: https://doi.org/10.1007/BF02655031

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