Abstract
Long wavelength infrared (LWIR) sensor arrays were fabricated in Pb1−xSnxSe layers grown epitaxially on Si-substrates by MBE. A CaF2 intermediate buffer layer ≈30dgA thick was employed for compatibility reasons. The photovoltaic sensors are based on the blocking Pb-contact technique on p-type material. They were fabricated using simple wet-etching process steps only. Cut-off wave-lengths were about 10.5 µm, quantum efficiencies >60%, and resistance-aera products above 3 Ω-cm2 at 90K. A demonstrational LWIR thermal imaging camera was assembled with a 256 element line array with 50 µm pitch. Low-noise signal processing was achieved with sensors with differential resistances in the 10 kOhm range by using JFET/CMOS technology. For each channel, an integrator, correlated multiple sampling and sample/hold amplifier was used before multiplexing to a common output.
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Zogg, H., Fach, A., John, J. et al. Pb1−xSnxSe-on-Si LWIR sensor arrays and thermal imaging with JFET/CMOS read-out. J. Electron. Mater. 25, 1366–1370 (1996). https://doi.org/10.1007/BF02655035
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DOI: https://doi.org/10.1007/BF02655035