Abstract
This work presents characterization of implanted and annealed double layer planar heterostructure HgCdTe for p-on-n photovoltaic devices. Our observation is that compositional redistribution in the structure during implantation/ annealing process differs from that expected from classical composition gradient driven interdiffusion and impacts the placement of the electrical junction with respect to the metallurgical heterointerface, which in turn affects quantum efficiency and RoA. The observed anomalous interdiffusion results in much wider cap layers with reduced composition difference between base and cap layer composition. The compositional redistribution can, however, be controlled by varying the material structure parameters and the implant/anneal conditions. Examples are presented for dose and implanted species variation. A model is proposed based on the fast diffusion in the irradiation induced damage region of the ion implantation. In addition, we demonstrate spatial uniformity obtained on molecular beam epitaxy (MBE) material of the compositional and implanted species profile. This reflects spatial uniformity of the ion implantation/annealing Processes and of the MBE material characteristics.
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Bubulac, L.O., Bajaj, J., Tennant, W.E. et al. Characteristics and uniformity of group V implanted and annealed HgCdTe heterostructure. J. Electron. Mater. 25, 1312–1317 (1996). https://doi.org/10.1007/BF02655025
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DOI: https://doi.org/10.1007/BF02655025