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In-situ spectroscopic ellipsometry of HgCdTe

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Abstract

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.

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Authors and Affiliations

  1. Night Vision and Electronics Sensors Directorate, 22060, Ft. Belvoir, VA

    J. D. Benson, A. B. Cornfeld, M. Martinka, K. M. Singley, Z. Derzko, P. J. Shorten & J. H. Dinan

  2. Army Research Lab, 22060, Ft Belvoir, VA

    P. R. Boyd & F. C. Wolfgram

  3. J.A. Woollam Co. Inc., 68508, Lincoln, NE

    B. Johs, P. He & John A. Woollam

Authors
  1. J. D. Benson
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  2. A. B. Cornfeld
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  3. M. Martinka
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  4. K. M. Singley
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  5. Z. Derzko
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  6. P. J. Shorten
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  7. J. H. Dinan
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  8. P. R. Boyd
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  9. F. C. Wolfgram
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  10. B. Johs
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  11. P. He
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  12. John A. Woollam
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Benson, J.D., Cornfeld, A.B., Martinka, M. et al. In-situ spectroscopic ellipsometry of HgCdTe. J. Electron. Mater. 25, 1406–1410 (1996). https://doi.org/10.1007/BF02655042

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  • DOI: https://doi.org/10.1007/BF02655042

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