Abstract
A CdHgTe resonant cavity light emitting diode (RCLED) is proposed as a new infrared emitter. The device is prepared by molecular beam epitaxy on a CdZnTe substrate. A 10.5 periods Bragg mirror is first deposited. The cavity material is made of Cd0.75Hg0.25Te and contains a wide well (50 nm) designed to emit at 3.2 µm. The last three periods of the mirror are n-type doped while the cavity material is covered by a thin p-type CdZnTe layer. A gold layer closes the cavity, serving as the second mirror of a Fabry-Perot cavity tuned around 3.18 urn. It also provides an ohmic contact to the p-region. Under forward bias, the emission spectrum displays a narrow peak (8 meV full width at half maximum) corresponding to the cavity resonance. The position and linewidth of this line are independent of temperature. The directivity of the diode is also improved with respect to a conventional emitter, in agreement with theoretical expectations. Taking advantage of the spectral properties of the RCLED a new multispectral device has been fabricated.
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Pautrat, J.L., Hadji, E., Bleuse, J. et al. Mercury cadmium telluride-based resonant cavity light emitting diode. J. Electron. Mater. 25, 1388–1393 (1996). https://doi.org/10.1007/BF02655039
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DOI: https://doi.org/10.1007/BF02655039