Abstract
A robust process has been developed for the reproducible growth of in-situ doped Hg1−xCdxTe:As alloys by molecular beam epitaxy. Net hole concentrations in excess of 5 x 1017 cm−3, with peak mobilities >200 cm2/Vs were measured in Hg0.74Cd0.26Te:As films. The p-type layers were twin-free and consistently exhibit narrow x-ray rocking curves (<40 arc sec). The reproducible growth of small lots of p-on-n LWIR detector structures has been established. For a typical lot consisting of 13 layers, the average x-value of the n-type base layer was 0.226 with a standard deviation of 0.003. The lateral compositional uniformity across a 2.5 cm × 2.5 cm wafer was × = +- 0.0006. High performance p-on-n LWIR diodes were fabricated that exhibited RoAo values (0-fov at 78K) as large as 350 Q cm2 at 10.4 µm.
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Rajavel, R.D., Jamba, D., Wu, O.K. et al. Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays. J. Electron. Mater. 25, 1411–1415 (1996). https://doi.org/10.1007/BF02655043
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DOI: https://doi.org/10.1007/BF02655043