Growth kinetics and properties of heteroepitaxial (Cd,Zn)Te films prepared by metalorganic molecular beam epitaxy D. RajavelJ. J. Zinck Special Issue Paper Pages: 803 - 808
Growth of HgSe and Hg1−xCdxSe thin films by molecular beam epitaxy Y. LansariJ. W. CookJ. F. Schetzina Special Issue Paper Pages: 809 - 813
CdTe and HgTe surface growth kinetics for molecular and metalorganic molecular beam epitaxy R. G. BenzB. K. WagnerC. J. Summers Special Issue Paper Pages: 815 - 820
Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates J. H. TregilgasC. F. WanH. Y. Liu Special Issue Paper Pages: 821 - 826
Substrate issues for the growth of mercury cadmium telluride R. TribouletA. Tromson-CarliT. Nguyen Duy Special Issue Paper Pages: 827 - 834
MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs S. M. JohnsonJ. A. VigilJ. M. Myrosznyk Special Issue Paper Pages: 835 - 842
Comparison of In1−xTlx Sb and Hg1−x Cdx Te as long wavelength infrared materials A. B. ChenM. Van SchilfgaardeA. Sher Special Issue Paper Pages: 843 - 846
Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes D. D. Edwall Special Issue Paper Pages: 847 - 851
Indium doping of HgCdTe grown by metalorganic chemical vapor deposition-direct alloy growth using triisopropylindium and diisopropyltellurium triisopropylindium adduct R. KorensteinP. H. HallockK. T. Higa Special Issue Paper Pages: 853 - 857
A new N-type doping precursor for MOCVD-IMP growth of detector quality MCT S. J. C. IrvineJ. BajajK. T. Higa Special Issue Paper Pages: 859 - 864
Effects of growth rate and mercury partial pressure on twin formation in HgCdTe (111) layers grown by metalorganic chemical vapor deposition K. ShigenakaL. SugiuraK. Hirahara Special Issue Paper Pages: 865 - 871
Improved CdTe layers on GaAs and Si using atomic layer epitaxy Wen-Sheng WangHassan EhsaniIshwara Bhat Special Issue Paper Pages: 873 - 878
The effect of substrate tilt on MOCVD growth of {100}CdTe on {100}GaAs W. J. HamiltonJ. A. VigilS. M. Johnson Special Issue Paper Pages: 879 - 885
Use of ellipsometry to characterize the surface of HgCdTe David R. Rhiger Special Issue Paper Pages: 887 - 898
Modeling of in situ monitored laser reflectance during MOCVD growth of HgCdTe J. BajajS. J. C. IrvineSpyros A. Svoronos Special Issue Paper Pages: 899 - 906
Hall effect characterization of LPE HgCdTe P/n heterojunctions S. P. TobinG. N. PultzP. W. Norton Special Issue Paper Pages: 907 - 914
Assessment of electrical inhomogeneity of undoped and doped Hg1−xCdxTe MOVPE (IMP) layers by variable magnetic field hall profile measurements M. L. YoungJ. GiessJ. S. Gough Special Issue Paper Pages: 915 - 921
Characterization of Hg1−xCdxTe heterostructures by thermoelectric measurements J. BaarsD. BrinkL. O. Bubulac Special Issue Paper Pages: 923 - 929
Photo-induced excess low frequency noise in HgCdTe photodiodes G. M. WilliamsR. E. De WamesE. R. Blazejewski Special Issue Paper Pages: 931 - 941
Synchrotron white beam x-ray topography analysis of MBE grown CdTe/CdTe (111)B T. FanningM. B. LeeM. Dudley Special Issue Paper Pages: 943 - 949
Structure of CdTe(111)B grown by MBE on misoriented Si(001) Y. P. ChenS. SivananthanJ. P. Faurie Special Issue Paper Pages: 951 - 957
X-ray diffraction characterization of LPE HgCdTe heterojunction photodiode material S. P. TobinE. E. KruegerP. W. Norton Special Issue Paper Pages: 959 - 966
Growth method, composition, and defect structure dependence of mercury diffusion in CdxHg1–xTe N. A. ArcherH. D. PalfreyA. F. W. Willoughby Special Issue Paper Pages: 967 - 971
Integrated heterostructure devices based on II–VI compound semiconductors J. RenY. LansariJ. F. Schetzina Special Issue Paper Pages: 973 - 975
UV photon assisted control of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayers Y. NemirovskyA. RuzinA. Bezinger Special Issue Paper Pages: 977 - 983
Heavily accumulated surfaces of mercury cadmium telluride detectors: Theory and experiment J. R. LowneyD. G. SeilerC. L. Littler Special Issue Paper Pages: 985 - 991
The role of the insulator in determining 1/f noise in Hg1-xCdxTe integrating MIS devices José L. MeléndezJeff Beck Special Issue Paper Pages: 993 - 998
Process modeling of point defect effects in Hg1-xCdxTe José L. MeléndezC. R. Helms Special Issue Paper Pages: 999 - 1004
Hg0.8Cd0.2Te native defects: Densities and dopant properties M. A. BerdingM. Van SchilfgaardeA. Sher Special Issue Paper Pages: 1005 - 1010
Observation of indium-vacancy and indium-hydrogen interactions in Hg1−xCdxTe WM. C. HughesM. L. SwansonJ. C. Austin Special Issue Paper Pages: 1011 - 1016
Electrical effects of dislocations and other crystallographic defects in Hg0.78Cd0.22Te n-on-p photodiodes R. S. List Special Issue Paper Pages: 1017 - 1025
Large improvement in HgCdTe photovoltaic detector performances at LETI G. DestefanisJ. P. Chamonal Special Issue Paper Pages: 1027 - 1032
Influence of Hg pressure on diffusion coefficient of As in HgCdTe D. ChandraM. W. GoodwinJ. A. Dodge Special Issue Paper Pages: 1033 - 1037
Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe S. H. ShinJ. M. AriasR. E. De Wames Special Issue Paper Pages: 1039 - 1047
MBE HgCdTe heterostructure p-on-n planar infrared photodiodes J. M. AriasJ. G. PaskoW. E. Tennant Special Issue Paper Pages: 1049 - 1053
Nanometer fabrication in mercury cadmium telluride by electron cyclotron resonance microwave plasma reactive ion etching C. R. EddyC. A. HoffmanE. A. Dobisz Special Issue Paper Pages: 1055 - 1060
Low threshold injection laser in HgCdTe Ph. BouchutG. DestefanisJ. Bablet Special Issue Paper Pages: 1061 - 1065
Vapor phase equilibria in the Cd1−xZnxTe alloy system H. R. VydyanathJ. A. EllsworthG. T. Neugebauer Special Issue Paper Pages: 1067 - 1071
Thermomigration of Te precipitates and improvement of (Cd,Zn)Te substrate characteristics for the fabrication of LWIR (Hg, Cd)Te photodiodes H. R. VydyanathJ. A. EllsworthPok-Kai Liao Special Issue Paper Pages: 1073 - 1080
Evidence for 1/f noise in diffusion current due to insulator trapping and surface recombination velocity fluctuations R. A. SchiebelD. BlanksM. A. Kinch Special Issue Paper Pages: 1081 - 1085
Properties of InAs/(Ga, In)Sb strained layer superlattices grown on the {111} orientations J. A. DuraJ. T. ZborowskiW. Covington Special Issue Paper Pages: 1087 - 1091
Auger lifetimes in ideal InGaSb/InAs superlattices C. H. GreinP. M. YoungT. C. McGill Special Issue Paper Pages: 1093 - 1096
In-situ ellipsometric measurements of the MBE growth of CdTe/HgTe and CdTe/ZnTe superlattices M. A. FolkardG. ShenM. Gal Special Issue Paper Pages: 1097 - 1102
States confined in the barriers of type-III HgTe/CdTe superlattices H. LuoL. R. Ram-MohanJ. K. Furdyna Special Issue Paper Pages: 1103 - 1106
Band gap uniformity and layer stability of HgTe-CdTe superlattices grown by photon-assisted molecular beam epitaxy R. W. VankaK. A. HarrisN. Otsuka Special Issue Paper Pages: 1107 - 1112
Comparison of the surface morphology and microstructure of in situ and ex situ derived YBa2Cu3O7−x thin films A. C. WesterheimP. C. McintyreM. J. Cima Regular Issue Paper Pages: 1113 - 1120
Fast vapor growth of cadmium telluride single crystals Heribert WiedemeierGuangheng Wu Regular Issue Paper Pages: 1121 - 1127
A physically based phenomenological model using boltzmann-matano analysis for boron diffusion from polycrystalline Si into single crystal Si Akif SultanMelvyn LoboC. Dennison Regular Issue Paper Pages: 1129 - 1135