Abstract
Single domain CdTe(111)B has been grown on Si(001) substrates tilted 1o 2o, and 4o toward [110]. All the layers started with a double-domain structure, then a transition from a double- to a single-domain was observed by reflection high energy electron diffraction. A microscopic picture of this transition is presented. We also measured the tilt between CdTe(111)B and Si(001). The result does not follow the tilt predicted by the currently existing model. A new model of the microscopic mechanism of CdTe(111)B growth is presented. New evidence indicates that optimizing the tilt of the substrate surface is very crucial in improving the CdTe(111)B crystal quality.
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Chen, Y.P., Sivananthan, S. & Faurie, J.P. Structure of CdTe(111)B grown by MBE on misoriented Si(001). J. Electron. Mater. 22, 951–957 (1993). https://doi.org/10.1007/BF02817509
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DOI: https://doi.org/10.1007/BF02817509