Abstract
Etch pit density and spatial compositional uniformity data are presented for organometallic vapor phase epitaxial Hg1−x Cdx Te grown by the direct alloy and interdiffused growth methods. For alloy growth, composition variation is as low as Δx=0.004 and 0.02 over 2- and 3-in diam areas, respectively; while for growth on CdZnTe substrates, etch pit density values lower than 2×105 cm−2 have been achieved. For interdiffused growth on CdZnTe, etch pit density values lower than 5×105 cm−2 have been obtained, while the composition variation is usually Δx≤0.004 and 0.014 over 2- and 3-in diam areas, respectively. Data demonstrate that the choice of particular CdZnTe substrate strongly affects the subsequent etch pit density measured in the layer. Reasonably uniform n-type doping over 3-in diam area using the source triethylgallium is also reported for both growth methods.
Similar content being viewed by others
References
J. Tunicliffe, S.J.C. Irvine, O.D. Dosser and J.B. Mullin,J. Cryst. Growth 66, 245 (1984).
S. Murakami, Y. Sakachi, H. Nishino, T. Saito, K. Shinohara, and H. Takigawa,J. Vac. Sci. Technol., B10, 1380 (1992).
R. Korenstein, P. Hallock and B. MacLeod,J. Vac. Sci. Technol. B9, 1630 (1991).
R. Koestner, V. Lopes, R. Korenstein, S. Oguz, V. Kreismanis, H. Ehsani and I. Bhat,J. Vac. Sci. Technol. B10, 1643 (1992).
M.J. Bevan, J. Greggi and N.J. Doyle,J. Mater. Res. 5, 1475 (1990).
D.D. Edwall, L.O. Bubulac and E.R. Gertner,J. Vac. Sci. Technol. B10, 1423 (1992).
D.D. Edwall, J.-S. Chen and L.O. Bubulac,J. Vac. Sci. Technol. B9, 1691 (1991).
J.-S. Chen, United States Patent No. 4897152.
S. Murakami, private communication.
S.J.C. Irvine, J. Bajaj and H.O. Sankur,J. Cryst. Growth (in press).
J. bajaj, S.J.C. Irvine and H.O. Sankur, “Modeling of In Situ Monitored Laser Reflectance During MOCVD Growth of HgCdTe,” 1992 U.S. Workshop on the Phys. and Chem. of Mercury Cadmium Telluride and Other IR Mater., Boston, MA (1992),J. Electron. Mater. 22, 899 (1993).
J. Thompson, P. Mackett and L.M. Smith,J. Cryst. Growth 86, 233 (1988).
S.K. Ghandhi, I.B. Bhat and H. Fardi,Appl. Phys. Lett. 52, 392 (1988).
R. Drulhe, F. Desjonqueres, A. Katty, A. Tromson-Carli, D. Lorans, L. Svob, A. Heurtel, Y. Marfaing and R. Triboulet,J. Cryst. Growth 101, 73 (1990).
D.D. Edwall, E.R. Gertner and L.O. Bubulac,J. Cryst. Growth 86, 240 (1988).
D.D. Edwall, J. bajaj and E.R. Gertner,J. Vac. Sci. Technol. A8, 1045 (1990).
D.D. Edwall, J.-S. Chen, J. Bajaj and E.R. Gertner,Semicond. Sci. Technol. 5, S221 (1990).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Edwall, D.D. Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes. J. Electron. Mater. 22, 847–851 (1993). https://doi.org/10.1007/BF02817496
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02817496