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Low threshold injection laser in HgCdTe

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Abstract

Narrow-stripe transverse injection lasers in HgCdTe have been successfully fabricated and operated. The double heterostructure of the laser was grown by molecular beam epitaxy on a {111} CdZnTe substrate. The n type base was extrinsically indium doped but other p type layers were only doped by deviation from stoichiometry. Laser emission at 3.4 μm and 3.56 μm was obtained at 78K under pulsed current conditions. Threshold current density as low as 90 A/cm2 at 40K was achieved. Over 65K, the threshold current variation with temperature showed a sharp increase due to a drift-current leakage in the structure.

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References

  1. I. Melngailis and A. Strauss,Appl. Phys. Let., 8, 179 (1966).

    Article  CAS  Google Scholar 

  2. M. Zandian, J.M. Arias, R. Zucca, R.V. Gil and S.H. Shin,Appl. Phys. Lett. 59, 1022 (1991).

    Article  CAS  Google Scholar 

  3. R. Zucca, M. Zandian, J.M. Arias and R.V. Gil,J Vac. Sci. Technol. B 10, 1587 (1992).

    Article  CAS  Google Scholar 

  4. K.K. Mahavadi, M.D. Lange and J.P. Faurie,Appl. Phys. Lett. 54, 2580 (1989).

    Article  CAS  Google Scholar 

  5. N.C. Giles, J.W. Han, J.W. Cooks and J.F. Schetzina,Appl. Phys. Lett. 55, 2026 (1989).

    Article  CAS  Google Scholar 

  6. J. Bleuze, N. Magnea, L. Ulmer, J.L. Pautrat and H. Mariette,J. Cryst. Growth 117 1046 (1992).

    Article  Google Scholar 

  7. P. Capper, P.A.C. Whiffin, B.C. Easton, C.D. Maxey and I. Kenworthy,Mater. Lett. 6, 365 (1988).

    Article  CAS  Google Scholar 

  8. L.O. Bubulac, W.E. Tennant, D.S. Lo, D.D. Edwall, J.C. Robinson, J.S. Chen and G. Bostrup,J. Vac. Sci. Technol. A5, 3166 (1987).

    Article  CAS  Google Scholar 

  9. M.F.S. Tang and D.A. Stevenson,J. Vac. Sci. Technol. A5, 3124 (1987).

    Article  CAS  Google Scholar 

  10. A. Ravid, A. Zussman, G. Cinader and A. Oron,Appl. Phys. Lett. 55, 2704 (1989).

    Article  CAS  Google Scholar 

  11. L.C. Chin, K.L. Yu, S. Margalit, T.R. Chen, U. Noren, A. Masson and A. Yariv,J. Quantum Electron 19, 1335 (1983).

    Article  Google Scholar 

  12. P.J. Anthony and N.E. Schumaker,J. Appl. Phys. 51 5038 (1980).

    Article  CAS  Google Scholar 

Download references

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Authors and Affiliations

  1. LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France

    Ph. Bouchut, G. Destefanis, A. Million, T. Colin & J. Bablet

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  1. Ph. Bouchut
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  2. G. Destefanis
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  3. A. Million
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  4. T. Colin
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  5. J. Bablet
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Bouchut, P., Destefanis, G., Million, A. et al. Low threshold injection laser in HgCdTe. J. Electron. Mater. 22, 1061–1065 (1993). https://doi.org/10.1007/BF02817525

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  • DOI: https://doi.org/10.1007/BF02817525

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