Skip to main content
SpringerLink
Log in

Improved CdTe layers on GaAs and Si using atomic layer epitaxy

  • Special Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

In this paper, we report on the atomic layer epitaxy (ALE) of CdTe on GaAs and Si by the organometallic vapor phase epitaxial process at atmospheric pressure. Self-limiting growth at one monolayer was obtained over the temperature range from 250°C to 320°C, under a wide range of reactant pressure conditions. A study of growth mechanism indicates that DMCd decomposes into Cd on the surface and the Te precursors react catalytically on the Cd covered surface. We have used this ALE grown layer to improve the crystal quality and the morphology of conventionally grown CdTe on GaAs. Improvement in the crystal quality was also observed when ALE CdTe nucleation was carried out on Si pretreated with DETe at 420°C. Atomic layer epitaxy grown ZnTe was used to obtain (100) oriented CdTe on (100) silicon.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R. Korenstein, P. Madison and P. Hallock,J. Vac. Sci. Technol. B10, 1370 (1992).

    Google Scholar 

  2. R. Sporken, Y.P. Chen, S. Sivananthan, M.D. Lange and J.P. Faurie,J. Vac. Sci. Technol. B10, 1405 (1992).

    Google Scholar 

  3. J.M. Arias, M. Zandian, S.H. Shin, W.V. McLevige, J.G. Pasko and R.E. Dewames,J. Vac. Sci. Technol. B9, 1646 (1991).

    Google Scholar 

  4. S.J.C. Irvine, D.D. Edwall, L.O. Bubulac, R.V. Gil and E.R. Gertner,J. Vac. Sci. Technol. B10, 1392 (1992).

    Google Scholar 

  5. H. Shtrikman, M. Oron, A. Raisman and G. Cinader,J. Electron. Mater. 17, 105 (1988).

    Article  CAS  Google Scholar 

  6. C. Goodman and M.V. Pessa,J. Appl. Phys. 60, R65 (1986).

    Article  CAS  Google Scholar 

  7. I.B. Bhat, H. Ehsani, W.S. Wang, S.K. Ghandhi and N.H. Karam,J. Vac. Sci. Technol. B10, 1376 (1992).

    Google Scholar 

  8. W.S. Wang, H. Ehsani and I.B. Bhat, to appear inJ. Cryst. Growth (1992).

  9. J.B. Mullin and S.J.C. Irvine,J. Vac. Sci. Technol. 21, 178 (1982).

    Article  CAS  Google Scholar 

  10. B. Bhat and S.K. Ghandi,J. Electrochem. Soc. 134, 195 (1987).

    Article  CAS  Google Scholar 

  11. Y. Lo, R.N. Bicknell, T.H. Myers, J.F. Schetzina and H.H. Stadelmeier,J. Appl. Phys. 54, 4238 (1983).

    Article  CAS  Google Scholar 

  12. R.L. Chow, M.S. Lin and K.S. Chou,J. Cryst. Growth 94, 551 (1989).

    Article  Google Scholar 

  13. T.G. Davey and E.H. Baker,J. Mater. Sci. Lett. 15, 1601 (1980).

    CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Isntitute, 12180, Troy, New York

    Wen-Sheng Wang, Hassan Ehsani & Ishwara Bhat

Authors
  1. Wen-Sheng Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hassan Ehsani
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Ishwara Bhat
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wang, WS., Ehsani, H. & Bhat, I. Improved CdTe layers on GaAs and Si using atomic layer epitaxy. J. Electron. Mater. 22, 873–878 (1993). https://doi.org/10.1007/BF02817500

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02817500

Key words

Search

Navigation