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Integrated heterostructure devices based on II–VI compound semiconductors

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Abstract

Integrated heterostructure devices which combine small band gap and large band gap II–VI materials in multilayered structures for light emission and detection applications are described.

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Authors and Affiliations

  1. Department of Physics, North Carolina State University, 27695-8202, Raleigh, NC

    J. Ren, Y. Lansari, Z. Yu, J. W. Cook & J. F. Schetzina

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  1. J. Ren
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  2. Y. Lansari
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  3. Z. Yu
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  4. J. W. Cook
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  5. J. F. Schetzina
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Ren, J., Lansari, Y., Yu, Z. et al. Integrated heterostructure devices based on II–VI compound semiconductors. J. Electron. Mater. 22, 973–975 (1993). https://doi.org/10.1007/BF02817512

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  • DOI: https://doi.org/10.1007/BF02817512

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