Abstract
In this paper, we present evidence for 1/f noise in diode diffusion current due to fluctuations in surface recombination velocity caused by insulator trapping. Using a unique structure consisting of a thin HgCdTe film with a pn junction on one side and an insulated gate on the other, we demonstrate that the noise measured in the junction is a strong function of the surface potential on the opposite side of the film. We compare the results to model predictions, finding good qualitative agreement.
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Schiebel, R.A., Blanks, D., Bartholomew, D. et al. Evidence for 1/f noise in diffusion current due to insulator trapping and surface recombination velocity fluctuations. J. Electron. Mater. 22, 1081–1085 (1993). https://doi.org/10.1007/BF02817528
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DOI: https://doi.org/10.1007/BF02817528