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The role of the insulator in determining 1/f noise in Hg1-xCdxTe integrating MIS devices

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Abstract

The low frequency 1/f noise charge found in Hg1-xCdxTe integrating metal-insulator-semiconductor (MIS) devices operating at 40K and low bias above threshold is found to be independent of integration time. The signal theory of random processes is utilized to demonstrate that 1/f noise charge resulting from carrier number fluctuations due to insulator traps should not depend on integration time, while 1/f noise charge resulting from 1/f noise in any current filling the MIS well should be proportional to integration time. This distinction allows for the determination of effective insulator trap densities from low temperature 1/f noise data on simple MIS structures. The technique is applied to a number of n-channel and p-channel devices and the effective trap densities in ZnS are determined.

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References

  1. A.L. McWhorter,Semiconductor Surface Physics (University of Pennsylvania Press, Philadelphia 1957, 207.

    Google Scholar 

  2. Raj Jayaraman and Charles G. SodiniIEEE Trans. Electron Devices 36, 1773 (1989).

    Article  CAS  Google Scholar 

  3. R. A. Schiebel,Solid-State Electron., 32, 1003 (1989).

    Article  CAS  Google Scholar 

  4. W. W. Anderson and H. J. Hoffman,J. Vac. Sci. Technol. A 1, 1730 (1983).

    Article  CAS  Google Scholar 

  5. José L. Meléndez, S. B. thesis, Massachusetts Institute of Technology, 1990.

  6. G. Reimbold,IEEE Trans. Electron. Devices ED32, 871 (1985).

    Article  Google Scholar 

  7. Raj Jayaraman, Ph. D. thesis, Massachusetts Institute of Technology, 1988.

  8. M. A. Kinch,Mat. Res. Soc. Symp. Proc. 90, 15 (1987).

    CAS  Google Scholar 

  9. R. A. Schiebel, J. Dodge, and R. Gooch,Electron. Lett. 26, 702 (1990).

    Article  Google Scholar 

  10. S. T. Hsu,Solid-State Electron. 13, 843 (1970).

    Article  Google Scholar 

  11. José L. Meléndez, S. M. thesis, Massachusetts Institute of Technology, 1991.

  12. R. Stratton, G. Lewicki and C. A. Mead,J. Phys. Chem. Solids 27, 1599 (1966).

    Article  CAS  Google Scholar 

  13. G. Lewicki and C. A. Mead,Phys. Rev. Lett. 16, 939 (1966).

    Article  CAS  Google Scholar 

  14. W. Franz, inHandbuch der Physik, ed. by S. Flugge (Verlag Julius Springer, Berlin 1956) 17, 155.

    Google Scholar 

  15. M. J. Yang, private communication (1990).

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Author notes

  1. José L. Meléndez

    Present address: Department of Electrical Engineering, Stanford University, 94305, Stanford, CA

Authors and Affiliations

  1. Central Research Laboratories, Texas Instruments, Inc., 75265, Dallas, TX

    José L. Meléndez & Jeff Beck

Authors
  1. José L. Meléndez
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  2. Jeff Beck
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Meléndez, J.L., Beck, J. The role of the insulator in determining 1/f noise in Hg1-xCdxTe integrating MIS devices. J. Electron. Mater. 22, 993–998 (1993). https://doi.org/10.1007/BF02817515

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  • DOI: https://doi.org/10.1007/BF02817515

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