Abstract
Thermally precracked diethylzinc, dimethylcadmium, and diethyltelluride were used for the metalorganic molecular beam epitaxial growth of (001) ZnTe, CdTe, and CdZnTe films on GaAs substrates. Measurements of the growth rate as a function of the substrate temperature and the II/VI ratio were used to determine the growth kinetics of (001) ZnTe and CdTe. (001) CdTe,ZnTe, and CdZnTe films were deposited under near-stoichiometric growth conditions, as determined from the growth kinetics. The best heteroepitaxial films exhibited x-ray rocking curve full widths at half maximum of 200–210 arc-s. The photoluminescence spectra of the binary and ternary films at 5K were dominated by features associated with bound and free excitons. Secondary ion mass spectrometry measurements showed that the films were free of carbon and oxygen. A new mercury precursor, divinylmercury, was used for HgTe growth. Preliminary results indicated that divinylmercury is a viable mercury source for metalorganic molecular beam epitaxial growth when it is precracked.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
W.T. Tsang,J. Cryst. Growth 120, 1 (1992).
B.K. Wagner, D. Rajavel, R.G. Benz, II and C.J. Summers,J. Vac. Sci. Technol. B9, 1656 (1991).
D.A. Scribner, M.R. Kruer and J.M. Killiany,Proc. IEEE 79, 66 (1991).
R.D. Feldman, D. Lee, A. Partovi, R.P. Stanley, A.M. Johnson, J.E. Zucker, A.M. Glass and J. Hegarty,Critical Rev. Solid State Mater. Sci. 17, 477 (1992).
S.M. Johnson, S. Sen, W.H. Konkel and M.H. Kalisher,J. Vac. Sci. Technol. B9, 1897 (1991).
D. Rajavel and J.J. Zinck,Appl. Phys. Lett. 61, 1534 (1992).
R.D. Feldman, R.F. Austin, P.M. Bridenbaugh, A.M. Johnson, W.M. Simpson, B.A. Wilson and C.E. Bonner,J. Appl. Phys. 64, 1191 (1988).
P.J. Dean, M.J. Kaue, N. Magnea, F. de Maigret, L.S. Dang, A. Nahmani, R. Romestain and M.S. Skolnick,J. Phys. C 18, 6185 (1985).
B.A. Wilson, C.E. Bonner, R.D. Feldman, R.F. Austin, D.W. Kisker, J.J. Krajewski and P.M. Bridenbaugh,J. Appl. Phys. 64, 3210 (1988).
M. Ekawa, Y. Kawakami, T. Taguchi and A. Hiraki,J. Cryst. Growth 93, 667 (1988).
R.D. Feldman, R.F. Austin, P.H. Fuoss, A.H. Dayhem, E.H. Westerwick, S. Nakahara, T. Boone, J. Menendez, A. Pinczuk, J.P. Valladares and S. Brennan,J. Vac. Sci. Technol. B5, 690 (1997).
R.G. Benz, II, B.K. Wagner, A. Conte and C.J. Summers, to be published inJ. Electron. Mater.
R.N. Bicknell, R.W. Yanka, N.C. Giles, J.F. Schetzina, T.J. Magee, C. Leung and H. Kawayoshi,Appl. Phys. Lett. 44, 313 (1984).
Z.C. Feng, A. Mascrenhas and W.J. Choyke,J. Lumin. 35, 329 (1986).
Z.C. Feng, M.G. Burke and W.J. Choyke,Appl. Phys. Lett. 53, 128 (1988).
E. Molva, J.L. Pautrat, K. Saminadayar, G. Milchberg and N. Magnea,Phys. Rev. B 30, 3344 (1984).
D.J. Olego, J.P. Faurie, S. Sivananthan and P.M. Raccah,Appl. Phys. Lett. 47, 1172 (1985).
W.M. Duncan, R.J. Koestner, J.H. Tregilgas, H.-Y. Li and M.-C. Chen,Mater. Res. Soc. Sym. Proc. 161, 39 (1990).
L.W. Tutt, unpublished results.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Rajavel, D., Zinck, J.J. Growth kinetics and properties of heteroepitaxial (Cd,Zn)Te films prepared by metalorganic molecular beam epitaxy. J. Electron. Mater. 22, 803–808 (1993). https://doi.org/10.1007/BF02817489
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02817489