Abstract
Two material properties important to the application of HgTe/CdTe superlattices for device fabrication are band gap uniformity and thermal stability. In this paper, we present the results of an infrared photoluminescence study of (211)B HgTe/CdTe superlattices grown by photon-assisted molecular beam epitaxy which show that cut-off wavelength uniformity can be controlled to a level commensurate with the demands of advanced infrared detector fabrication. Infrared photoluminescence and transmission electron microscopy were also employed to demonstrate that (211)B HgTe/CdTe superlattices are less prone to interdiffusion than previously believed.
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Vanka, R.W., Harris, K.A., Mohnkern, L.M. et al. Band gap uniformity and layer stability of HgTe-CdTe superlattices grown by photon-assisted molecular beam epitaxy. J. Electron. Mater. 22, 1107–1112 (1993). https://doi.org/10.1007/BF02817533
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DOI: https://doi.org/10.1007/BF02817533