Abstract
The diffusion of boron in single crystal Si from a BF2-implanted polycrystalline Si film deposited on single crystal Si has been accurately modeled. The effective diffusivities of boron in the single crystal Si substrate have been extracted using Boltzmann-Matano analysis and the new phenomenological model for B diffusivity has been implemented in the PEPPER simulation program. The model has been implemented for a range of furnace anneal conditions (800 to 950°C, from 30 min to 6h) and implant conditions (BF2 doses varied from 5×1015 to 2×1016 cm−2 at 70 keV).
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Sultan, A., Lobo, M., Bhattacharya, S. et al. A physically based phenomenological model using boltzmann-matano analysis for boron diffusion from polycrystalline Si into single crystal Si. J. Electron. Mater. 22, 1129–1135 (1993). https://doi.org/10.1007/BF02817536
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DOI: https://doi.org/10.1007/BF02817536