Abstract
The technology to control the interface charge density between CdTe substrates and CdTe epilayers grown by metalorganic chemical vapor deposition is studied. The interface charge is determined by the modified built-in potential derived from capacitance-voltage characteristics of Schottky contacts formed on the epilayers. Novel ultraviolet (UV) photon assisted and photo thermal surface pretreatments that control the interface between p-type CdTe substrates and CdTe epilayers are reported. The substrates are exposed to UV radiation provided by a high pressure Hg lamp operating at 600 W with a wide emission spectrum between 190 and 300 nm. The UV photon assisted surface pretreatment with hydrogen is compared with additional surface pretreatments: thermal pretreatment with hydrogen (without UV photons) and UV photo thermal pretreatment with hydrogen. The UV photon assisted and the UV photo thermal surface pretreatments with hydrogen reduce the interface charge density to a practically negligible value. In addition, the p-type doping level of the substrate is reduced considerably in a layer of few microns adjacent to the interface.
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References
H. Kroemer,VLSI Electronics: Microstructure Science, (Academic Press, N.Y., 1985), Vol. 10, Ch. 4 and references therein.
S.M. Sze,Physics of Semiconductor Devices, 2nd. Ed. (Wiley, New York, (1981), Ch. 5.
D. Goren, N. Amir and Y. Nemirovsky,J. Appl. Phys. 71, 318 (1992).
Y. Nemirovsky, A. Ruzin and A. Bezinger, to be published inTrends in Vacuum Science & Technology (1993).
P. Lovecchio, M.B. Reine and M.N. Grimbergen,J. Vac. Sci. & Technol. A3, 246 (1985).
C.C. Wang,J. Vac. Sci. Technol. B9, 1740 (1991).
Y.C. Lu, C.M. Stahle, R.S. Feigelson and J. Morimoto,J. Appl. Phys. 62, 4453 (1987).
J.G. Werthen, J.P. Haering, A.L. Farenbruch and R.H. Bube,J. Appl. Phys. 54, 5982 (1983).
J.P. Haering, J.G. Werthen and R.H. Bube,J. Vac. Sci. Technol. A1, 1469 (1983).
R.D. Feldman, R.L. Opila and P.M. Bridenbaugh,J. Vac. Sci. Technol. A3, 1988 (1985).
V. Solzbach and H.J. Richter,Surf. Sci. 97, 191 (1980).
A.J. Ricco, H.S. White and M.S. Wrighton,J. Vac. Sci. Technol. A2, 910 (1984).
M. Hage-Ali, R. Stick, A.N. Saxena and P. Siffert,Appl. Phys. 19, 25 (1979).
I.M. Dharmadasa, W.G. Herrenden-Harker and R.H. Williams,Appl. Phys. Lett. 48, 1802 (1986).
A.K. Wahi, G.P. Carey, K. Miyano, T.T. Chiang, I. Lindau and W.E. Spicer,J. Vac. Sci. Technol. A8, 1152 (1990).
A.K. Wahi, G.P. Carey, K. Miyano, T.T. Chiang, I. Lindau and W.E. Spicer,J. Vac. Sci. Technol. A7, 494 (1989).
D.J. Friedman, I. Lindau and W.E. Spicer, Phys. Rev. B37, 731 (1988).
F.F. Wang, A.L. Fahrenbruch and R.H. Bube,J. Appl. Phys. 65, 3552 (1989).
R.L. Van Meirhaeghe, R. Van de Walle, W.H. Laflere and F. Cardon,J. Appl. Phys. 70, 2200 (1991).
A. Ruzin, A. Bezinger, and Y. Nemirovsky, to be published,J. Appl. Phys. (1993).
N. Amir, D. Goren, D. Fekete and Y. Nemirovsky,J. Electron. Mater. 20, 227 (1990).
Y. Nemirovsky, D. Goren and A. Ruzin,J. Electron. Mater. 20, 609 (1991).
S.J.C. Irvine,CRC Critical Reviews in Solid State and Mater. Sci. 13, 279 (1987).
J.T. Cheung, S.H. Shin, J.G. Pasko and R.E. DeWames,J. Vac. Sci. Technol. B10, 1538 (1992).
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Nemirovsky, Y., Ruzin, A. & Bezinger, A. UV photon assisted control of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayers. J. Electron. Mater. 22, 977–983 (1993). https://doi.org/10.1007/BF02817513
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DOI: https://doi.org/10.1007/BF02817513