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CdTe and HgTe surface growth kinetics for molecular and metalorganic molecular beam epitaxy

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Abstract

The surface growth kinetics of CdTe and HgTe have been investigated during molecular and metalorganic molecular beam epitaxy. The surface growth kinetics was studied through in-situ measurements of the growth rate as a function of flux ratio and substrate temperature on the (001), (111)B, and (211)B CdTe surface orientations. For the (001) and (111)B CdTe growth kinetics, the existence of low binding energy surface precursor sites was proposed for both molecular and atomic growth species before lattice incorporation. Intensity oscillations were observed during HgTe growth on misoriented (111)B surfaces and during CdTe growth on the (211)B orientation. The (211)B surface reconstructions displayed both vicinal and singular surface characteristics, depending on the growth flux ratio.

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Authors and Affiliations

  1. Electro-Optics and Physical Sciences Laboratory, Georgia Tech Research Institute, 30332, Atlanta, GA

    R. G. Benz, B. K. Wagner, A. Conte & C. J. Summers

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  1. R. G. Benz
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  2. B. K. Wagner
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  3. A. Conte
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  4. C. J. Summers
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Benz, R.G., Wagner, B.K., Conte, A. et al. CdTe and HgTe surface growth kinetics for molecular and metalorganic molecular beam epitaxy. J. Electron. Mater. 22, 815–820 (1993). https://doi.org/10.1007/BF02817491

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  • DOI: https://doi.org/10.1007/BF02817491

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