Investigation of the influence of external effects on the behavior of gold impurity in silicon S. Z. ZainabidinovO. O. MamatkarimovU. A. Tuichiev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 615 - 617
Internal friction related to changes in the shape of small inclusions Yu. N. AndreevB. M. DarinskiiN. P. Yaroslavtsev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 618 - 620
Specifics of MOCVD formation of InxGa1−x N inclusions in a GaN matrix I. P. SoshnikovV. V. LundinD. Gerthsen Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 621 - 625
Interband emission of cadmium thiogallate A. I. MachugaV. F. Zhitar’E. D. Arama Electronic and Optical Properties of Semiconductors Pages: 626 - 628
Redistribution of phosphorus implanted into silicon doped heavily with boron E. G. TishkovskiiV. I. ObodnikovV. G. Seryapin Electronic and Optical Properties of Semiconductors Pages: 629 - 633
Multiphonon capture of charge carriers by deep-level centers in a depletion region of a semiconductor M. A. Dem’yanenkoV. N. OvsyukV. V. Shashkin Electronic and Optical Properties of Semiconductors Pages: 634 - 640
Temperature dependences of electrical properties of n-type PbSe single-crystalline films subjected to α-particle bombardment Ya. P. SaliiR. Ya. Salii Electronic and Optical Properties of Semiconductors Pages: 641 - 643
Charge carrier mobility in n-CdxHg1−x Te crystals subjected to dynamic ultrasonic stressing A. I. VlasenkoYa. M. OlikhR. K. Savkina Electronic and Optical Properties of Semiconductors Pages: 644 - 649
On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures E. I. Gol’dmanA. G. ZhdanG. V. Chucheva Electronic and Optical Properties of Semiconductors Pages: 650 - 654
Equilibrium energy distribution of localized carriers in disordered semiconductors subjected to an external electric field at low temperature D. V. NikolaenkovV. I. ArkhipovV. R. Nikitenko Electronic and Optical Properties of Semiconductors Pages: 655 - 657
Photoelectric phenomena in a-Si:H/p-CuInSe2 heterostructures Yu. A. NikolaevV. Yu. Rud’E. I. Terukov Electronic and Optical Properties of Semiconductors Pages: 658 - 661
Thermoelectric and photoelectric properties of the p-n CuInSe2/CdS heterostructures obtained by the quasi-equilibrium deposition method M. -R. A. MagomedovSh. M. IsmailovP. P. Khokhlachev Semiconductor Structures, Interfaces, and Surfaces Pages: 662 - 664
Critical voltage growth rate when initiating the ultrafast impact ionization front in a diode structure A. M. MinarskiiP. B. Rodin Semiconductor Structures, Interfaces, and Surfaces Pages: 665 - 667
Special features of generation-recombination processes in the p-n junctions based on HgMnTe L. A. KosyachenkoS. É. OstapovWeiguo Sun Semiconductor Structures, Interfaces, and Surfaces Pages: 668 - 670
Influence of SiO2 protective films on the diffusion of atomic hydrogen during the hydrogenation of epitaxial n-GaAs A. V. PaninN. A. Torkhov Semiconductor Structures, Interfaces, and Surfaces Pages: 671 - 676
Photosensitivity of a-Si:H/n-InSe heterocontacts Yu. A. NikolaevV. Yu. Rud’E. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 677 - 679
Surface magnetoplasma waves in a ferromagnetic semiconductor and their excitation by a magnetic dipole V. L. Fal’koS. I. KhankinaV. M. Yakovenko Semiconductor Structures, Interfaces, and Surfaces Pages: 680 - 685
Reflection coefficient of a semiconductor superlattice subjected to a magnetic field A. A. BulgakovO. V. Shramkova Low-Dimensional Systems Pages: 686 - 692
Low-temperature photoluminescence and X-ray diffractometry study of InxGa1−x As quantum wells S. V. EvstigneevR. M. ImamovD. S. Shipitsin Low-Dimensional Systes Pages: 693 - 699
Self-ordered microcavities embedded in ultrashallow silicon p-n junctions N. T. BagraevA. D. BuravlevS. A. Rykov Low-Dimensional Systems Pages: 700 - 711
Ballistic conductance of a quantum wire at finite temperatures N. T. BagraevV. K. IvanovI. A. Shelykh Low-Dimensional Systems Pages: 712 - 716
Kinetics of light-induced degradation in a-Si:H films investigated by computer simulation M. N. MeytinM. ZemanJ. W. Metselaar Morphous, Vitreous, and Porous Semiconductors Pages: 717 - 722
The staebler-wronski effect and temperature dependences of photoconductivity in p-type a-Si:H S. V. Kuznetsov Amorphous, Vitreous, and Porous Semiconductors Pages: 723 - 727
Modification of optoelectronic properties of porous silicon produced in an electrolyte based on heavy water B. V. KamenevE. A. KonstantinovaV. Yu. Timoshenko Amorphous, Vitreous, and Porous Semiconductors Pages: 728 - 731
Optical and electrical properties of porous gallium arsenide N. S. AverkievL. P. KazakovaN. N. Smirnova Amorphous, Vitreous, and Porous Semiconductors Pages: 732 - 736
Effect of nanocrystalline inclusions on the photosensitivity of amorphous hydrogenated silicon films O. A. GolikovaM. M. Kazanin Amorphous, Vitreous, and Porous Semiconductors Pages: 737 - 740