Oleg Vladimirovich Losev: Pioneer of semiconductor electronics (celebrating one hundred years since his birth) M. A. Novikov Announcement Pages: 1 - 4
Electroluminescence efficiency of silicon diodes M. S. BreslerO. B. GusevI. N. Yassievich Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 5 - 9
Structural and photoluminescence properties of heteroepitaxial silicon-on-sapphire layers S. P. SvetlovV. Yu. ChalkovA. F. Khokhlov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 10 - 12
Edge electroluminescence of silicon: An amorphous-silicon-crystalline-silicon heterostructure M. S. BreslerO. B. GusevW. Fuhs Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 13 - 16
The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system D. I. TetelbaumO. N. GorshkovA. I. Kovalev Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 17 - 21
Photoluminescence and structural defects in silicon layers implanted by iron ions É. A. ShteinmanV. I. VdovinA. F. Borun Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 22 - 26
Phonon-assisted radiative electron-hole recombination in silicon quantum dots V. A. BelyakovV. A. BurdovS. A. Trushin Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 27 - 31
Formation of two-dimensional photonic-crystal structures in silicon for near-infrared region using fine focused ion beams A. F. VyatkinE. Yu. GavrilinV. V. Sirotkin Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 32 - 34
Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into n-Si N. A. SobolevA. M. Emel’yanovV. I. Vdovin Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 35 - 39
Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength A. M. Emel’yanovN. A. SobolevE. I. Shek Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 40 - 44
New mechanisms of localization of charge carriers in nanosilicon I. V. BlonskyyA. Yu. VakhninA. K. Kadashchuk Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 45 - 48
Si/Ge nanostructures for optoelectronics applications V. A. EgorovG. É. CirlinP. Werner Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 49 - 55
Ge/Si quantum dots in external electric and magnetic fields A. V. DvurechenskiiA. I. YakimovA. F. Zinov’eva Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 56 - 59
Photoluminescence of self-assembled GeSi/Si(001) nanoislands of different shapes N. V. VostokovZ. F. Krasil’nikA. N. Yablonskii Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 60 - 63
Synthesis of ordered Ge-Si heterostructures containing ultrasmall germanium nanoclusters Yu. B. BolkhovityanovS. Ts. KrivoshchapovS. A. Teys Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 64 - 66
Correlation between the energy of SiGe nanoislands and their shape and size M. Ya. ValakhV. N. DzhaganA. M. Yaremko Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 67 - 70
Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures T. M. BurbaevV. A. KurbatovV. A. Tsvetkov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 71 - 73
Stepwise dependence of the photoconductivity of Si/Ge structures with quantum dots on the interband illumination intensity O. A. ShegaiV. A. MarkovA. I. Nikiforov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 74 - 76
Growth and structure of Ge nanoislands on an atomically clean silicon oxide surface A. I. NikiforovV. V. Ul’yanovA. K. Gutakovskii Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 77 - 79
Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer S. A. TeysA. B. TalochkinB. Z. Olshanetsky Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 80 - 84
Composition and elastic stresses in multilayer structures with Si1−x Gex nanoislands M. Ya. ValakhV. N. DzhaganD. N. Lobanov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 85 - 88
Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis L. V. SokolovA. S. DeryabinA. V. Dvurechenskii Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 89 - 91
Resonant Raman scattering by strained and relaxed germanium quantum dots A. G. MilekhinA. I. NikiforovD. R. T. Zahn Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 92 - 96
Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures B. A. AndreevZ. F. Krasil’nikM. A. J. Klik Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 97 - 100
Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy V. G. ShengurovS. P. SvetlovD. I. Kryzhkov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 101 - 103
High-efficiency erbium ion luminescence in silicon nanocrystal systems P. K. KashkarovB. V. KamenevM. Zacharias Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 104 - 108
Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy V. B. ShmaginD. Yu. RemizovM. N. Drozdov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 109 - 112
The role of microstructure in luminescent properties of Er-doped nanocrystalline Si thin films M. V. StepikhovaM. F. CerqueiraM. J. Soares Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 113 - 117
Intraband absorption and emission of light in quantum wells and quantum dots L. E. Vorob’evV. Yu. PanevinV. M. Ustinov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 118 - 121
Photoconductivity of lead telluride-based doped alloys in the submillimeter wavelength range K. G. KristovskiiA. E. KozhanovD. R. Khokhlov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 122 - 124
Shallow-impurity-assisted transitions in the course of submillimeter magnetoabsorption of strained Ge/GeSi(111) quantum-well heterostructures V. Ya. AleshkinD. B. VekslerO. A. Kuznetsov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 125 - 129
Intersubband cyclotron resonance of holes in strained Ge/GeSi(111) heterostructures with germanium wide quantum wells and cyclotron resonance of 1L electrons in GeSi layers V. Ya. AleshkinD. B. VekslerO. A. Kuznetsov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 130 - 137
Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors J. LusakowskiW. KnapS. Morozov Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 138 - 145
Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas A. V. AntonovV. I. GavrilenkoM. S. Shur Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 146 - 149
Cyclotron resonance of holes in silicon in quantizing magnetic fields D. B. VekslerV. I. GavrilenkoK. E. Spirin Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 150 - 152
Plasmon-induced terahertz absorption and photoconductivity in a grid-gated double-quantum-well structure V. V. PopovT. V. TeperikM. C. Wanke Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 153 - 156
Destruction and stabilization of the electromagnetic transparency of a semiconductor superlattice Yu. A. RomanovYu. Yu. Romanova Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 157 - 163
On a superlattice bloch oscillator Yu. A. RomanovYu. Yu. Romanova Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 164 - 169
Bose condensation of interwell excitons in lateral traps: A phase diagram A. A. DreminA. V. LarionovV. B. Timofeev Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 170 - 172
Electronic states and vibration spectra of CdTe/ZnTe quantum dot superlattices V. S. BagaevL. K. Vodop’yanovG. Karczewski Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 173 - 175
Resonant stokes and anti-stokes Raman scattering of light in CdSe/ZnSe nanostructures M. Ya. ValakhV. V. StrelchukYu. G. Sadofyev Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003) Pages: 176 - 178
The influence of hydrostatic pressure on the static and dynamic properties of an InSe crystal: A first-principles study K. Z. Rushchanskii Semiconductors and Dielectrics Pages: 179 - 187
Temperature dependences of the dielectric properties of lithium-titanium ferrite ceramics A. V. MalyshevV. V. PeshevA. M. Pritulov Magnetism and Ferroelectricity Pages: 188 - 191
Erratum: “Phase separation of the spin system in the La0.93Sr0.07MnO3 crystal” [Phys. solid state 45 (12), 2297 (2003)] S. F. DubuninV. E. ArkhipovN. I. Solin Erratum Pages: 192 - 192