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The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

The possible mechanisms of the influence of implanted impurities of Group III and V elements on the luminescence properties of a system consisting of silicon nanocrystals in SiO2 are considered and generalized. The effect of boron and nitrogen ion implantation on the photoluminescence intensity is investigated experimentally. The experimental results and previously reported data on the ion-implantation doping with phosphorus are discussed in terms of the mechanisms under consideration. The state of implanted phosphorus is determined using x-ray photoelectron spectroscopy. It is shown that the enhancement and degradation of the photoluminescence depend on the type of implanted impurities and the conditions of postimplantation heat treatment.

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Authors and Affiliations

  1. Physicotechnical Research Institute, Nizhni Novgorod State University, pr. Gagarina 23/3, Nizhni Novgorod, 603950, Russia

    D. I. Tetelbaum, O. N. Gorshkov, V. A. Burdov, S. A. Trushin & A. N. Mikhaylov

  2. Institute of Microstructure Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    D. M. Gaponova & S. V. Morozov

  3. Bardin Central Research Institute of Ferrous Metallurgy, Vtoraya Baumanskaya ul. 9/23, Moscow, 107005, Russia

    A. I. Kovalev

Authors
  1. D. I. Tetelbaum
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  2. O. N. Gorshkov
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  3. V. A. Burdov
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  4. S. A. Trushin
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  5. A. N. Mikhaylov
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  6. D. M. Gaponova
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  7. S. V. Morozov
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  8. A. I. Kovalev
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 21–25.

Original Russian Text Copyright © 2004 by Tetelbaum, Gorshkov, Burdov, Trushin, Mikhaylov, Gaponova, Morozov, Kovalev.

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Tetelbaum, D.I., Gorshkov, O.N., Burdov, V.A. et al. The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system. Phys. Solid State 46, 17–21 (2004). https://doi.org/10.1134/1.1641912

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  • DOI: https://doi.org/10.1134/1.1641912

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