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Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

The parameters of silicon light-emitting diodes (LEDs) prepared through boron implantation into n-Si, followed by annealing at 700–1200°C, were studied. The maximum room-temperature internal quantum efficiency of electroluminescence (EL) in the region of band-to-band transitions was estimated as 0.4% and reached at an annealing temperature of 1100°C. This value did not vary more than twofold within the operating temperature range 80–500 K. The EL growth and decay kinetics was studied at various currents. Following an initial current range of nonlinear dependence, the EL intensity scaled linearly with the current. It is shown that interpretation of this result will apparently require a revision of some present-day physical concepts concerning carrier recombination in silicon diodes.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. M. Emel’yanov, N. A. Sobolev & E. I. Shek

Authors
  1. A. M. Emel’yanov
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  2. N. A. Sobolev
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  3. E. I. Shek
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 44–48.

Original Russian Text Copyright © 2004 by Emel’yanov, Sobolev, Shek.

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Emel’yanov, A.M., Sobolev, N.A. & Shek, E.I. Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength. Phys. Solid State 46, 40–44 (2004). https://doi.org/10.1134/1.1641917

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