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Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

A series of Si: Er/Si light-emitting diode structures with a smoothly varying p-n junction breakdown mechanism, grown through sublimation molecular-beam epitaxy, is used to investigate the effect of the breakdown mechanism on the electroluminescence of the structures. The maximal intensity and excitation efficiency of room-temperature Er3+ ion electroluminescence are shown to be attained in diode structures with a mixed breakdown mechanism.

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Authors and Affiliations

  1. Institute of the Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    V. B. Shmagin, D. Yu. Remizov, Z. F. Krasil’nik, V. P. Kuznetsov, V. N. Shabanov, L. V. Krasil’nikova, D. I. Kryzhkov & M. N. Drozdov

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  1. V. B. Shmagin
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  2. D. Yu. Remizov
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  3. Z. F. Krasil’nik
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  4. V. P. Kuznetsov
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  5. V. N. Shabanov
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  6. L. V. Krasil’nikova
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  7. D. I. Kryzhkov
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  8. M. N. Drozdov
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 110–113.

Original Russian Text Copyright © 2004 by Shmagin, Remizov, Krasil’nik, Kuznetsov, Shabanov, Krasil’nikova, Kryzhkov, Drozdov.

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Shmagin, V.B., Remizov, D.Y., Krasil’nik, Z.F. et al. Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy. Phys. Solid State 46, 109–112 (2004). https://doi.org/10.1134/1.1641934

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