Abstract
The total energy of self-assembled SiGe nanoislands on a silicon substrate is investigated theoretically as a function of their geometric and physical parameters. It is demonstrated that the growth temperature and the silicon content in nanoislands affect the minimum of their energy. The results of numerical calculations for nanoislands are compared with experimental data obtained by atomic-force microscopy.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 70–73.
Original Russian Text Copyright © 2004 by Valakh, Dzhagan, Krasil’nik, Lytvyn, Lobanov, Mozdor, Novikov, Yukhymchuk, Yaremko.
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Valakh, M.Y., Dzhagan, V.N., Krasil’nik, Z.F. et al. Correlation between the energy of SiGe nanoislands and their shape and size. Phys. Solid State 46, 67–70 (2004). https://doi.org/10.1134/1.1641923
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DOI: https://doi.org/10.1134/1.1641923