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New mechanisms of localization of charge carriers in nanosilicon

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

This paper reports on the results of investigations into the spectral dependences of thermally stimulated luminescence and the temperature dependences of tunneling luminescence in highly oxidized porous silicon samples. Two new mechanisms of localization of charge carriers are considered in terms of the specific features revealed in the spectral dependences of the thermally stimulated luminescence and nonmonotonic temperature dependences of the Becquerel index of tunneling luminescence decay. The proposed mechanisms of charge carrier localization are associated with structure heterogeneities inherent in these objects, namely, superficial SiOx oxide shells (0<x≤2) enclosing silicon particles and an undulating structure of silicon wires.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 46, Kiev, 03028, Ukraine

    I. V. Blonskyy, A. Yu. Vakhnin, V. N. Kadan & A. K. Kadashchuk

Authors
  1. I. V. Blonskyy
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  2. A. Yu. Vakhnin
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  3. V. N. Kadan
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  4. A. K. Kadashchuk
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 49–52.

Original Russian Text Copyright © 2004 by Blonskyy, Vakhnin, Kadan, Kadashchuk.

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Blonskyy, I.V., Vakhnin, A.Y., Kadan, V.N. et al. New mechanisms of localization of charge carriers in nanosilicon. Phys. Solid State 46, 45–48 (2004). https://doi.org/10.1134/1.1641918

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  • DOI: https://doi.org/10.1134/1.1641918

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