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Si/Ge nanostructures for optoelectronics applications

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

The optical and structural properties of multilayer Si/Ge structures with precritical, as well as close-to-critical, germanium inclusions in a silicon matrix, for which the transition from the two-dimensional to island growth occurs, were studied. The possibility of obtaining intense photoluminescence at room temperature in both cases under optimally chosen growth parameters is demonstrated. The proposed approaches to producing an active region appear promising for applications in silicon-based optoelectronics.

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Authors and Affiliations

  1. Institute of Analytical Instrumentation, Russian Academy of Sciences, Rizhskii pr. 26, St. Petersburg, 190103, Russia

    V. A. Egorov, G. É. Cirlin & A. A. Tonkikh

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. A. Egorov, G. É. Cirlin, A. A. Tonkikh, A. G. Makarov, N. N. Ledentsov & V. M. Ustinov

  3. Fock Institute of Physics, St. Petersburg State University, ul. Pervogo Maya 100, Petrodvorets, St. Petersburg, 198504, Russia

    V. G. Talalaev

  4. Max-Planck-Institut für Mikrostrukturphysik, Halle(Saale), D-06120, Germany

    V. A. Egorov, G. É. Cirlin, A. A. Tonkikh, V. G. Talalaev, N. D. Zakharov & P. Werner

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  1. V. A. Egorov
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  2. G. É. Cirlin
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  3. A. A. Tonkikh
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  4. V. G. Talalaev
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  5. A. G. Makarov
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  6. N. N. Ledentsov
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  7. V. M. Ustinov
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  8. N. D. Zakharov
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  9. P. Werner
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 53–59.

Original Russian Text Copyright © 2004 by Egorov, Cirlin, Tonkikh, Talalaev, Makarov, Ledentsov, Ustinov, Zakharov, Werner.

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Egorov, V.A., Cirlin, G.É., Tonkikh, A.A. et al. Si/Ge nanostructures for optoelectronics applications. Phys. Solid State 46, 49–55 (2004). https://doi.org/10.1134/1.1641919

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