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Shallow-impurity-assisted transitions in the course of submillimeter magnetoabsorption of strained Ge/GeSi(111) quantum-well heterostructures

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

The submillimeter (f=130–1250 GHz) magnetoabsorption spectra of strained Ge/GeSi(111) multilayer heterostructures with quantum wells are investigated at T=4.2 K upon band-gap optical excitation. It is found that the magnetoabsorption spectra contain lines associated with the excitation of residual shallow acceptors. The resonance absorption observed can be initiated by optical transitions between the impurity states belonging to two pairs of Landau levels of holes in germanium quantum-well layers.

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Authors and Affiliations

  1. Institute of Microstructure Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    V. Ya. Aleshkin, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva, A. V. Ikonnikov & D. V. Kozlov

  2. Physicotechnical Research Institute, Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia

    O. A. Kuznetsov

Authors
  1. V. Ya. Aleshkin
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  2. D. B. Veksler
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  3. V. I. Gavrilenko
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  4. I. V. Erofeeva
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  5. A. V. Ikonnikov
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  6. D. V. Kozlov
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  7. O. A. Kuznetsov
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 126–130.

Original Russian Text Copyright © 2004 by Aleshkin, Veksler, Gavrilenko, Erofeeva, Ikonnikov, Kozlov, Kuznetsov.

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Aleshkin, V.Y., Veksler, D.B., Gavrilenko, V.I. et al. Shallow-impurity-assisted transitions in the course of submillimeter magnetoabsorption of strained Ge/GeSi(111) quantum-well heterostructures. Phys. Solid State 46, 125–129 (2004). https://doi.org/10.1134/1.1641938

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  • DOI: https://doi.org/10.1134/1.1641938

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