Abstract
The temperature dependence of the photoluminescence (PL) spectrum of silicon quantum dots (QDs) is studied both theoretically and experimentally, and the time of the corresponding electron-hole radiative recombination is calculated. The dependence of the recombination time on the QD size is discussed. The experiment shows that the PL intensity decreases by approximately 60% as the temperature increases from 77 to 293 K. The calculated characteristic recombination time has only a weak temperature dependence; therefore, the decrease in the PL intensity is associated primarily with nonradiative transitions. It is also shown that the phonon-assisted radiation is much more efficient than the zero-phonon emission. Moreover, the zero-phonon recombination time depends on the QD radius R as R 8, whereas the phonon-assisted recombination time depends on this radius as R 3.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 31–34.
Original Russian Text Copyright © 2004 by Belyakov, Burdov, Gaponova, Mikhaylov, Tetelbaum, Trushin.
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Belyakov, V.A., Burdov, V.A., Gaponova, D.M. et al. Phonon-assisted radiative electron-hole recombination in silicon quantum dots. Phys. Solid State 46, 27–31 (2004). https://doi.org/10.1134/1.1641914
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DOI: https://doi.org/10.1134/1.1641914