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Cyclotron resonance of holes in silicon in quantizing magnetic fields

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

The cyclotron resonance spectra of holes in bulk silicon in quantizing magnetic fields are investigated in the low-temperature range. The data obtained agree well with the results of the numerical calculation performed earlier by Owner-Petersen and Samuelsen for effective cyclotron masses m*/m 0 and matrix elements M upon transitions between different Landau levels of holes in silicon with a magnetic-field orientation H ∥ [001].

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Authors and Affiliations

  1. Institute of Microstructure Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    D. B. Veksler, V. I. Gavrilenko & K. E. Spirin

Authors
  1. D. B. Veksler
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  2. V. I. Gavrilenko
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  3. K. E. Spirin
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Additional information

__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 150–151.

Original Russian Text Copyright © 2004 by Veksler, Gavrilenko, Spirin.

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Veksler, D.B., Gavrilenko, V.I. & Spirin, K.E. Cyclotron resonance of holes in silicon in quantizing magnetic fields. Phys. Solid State 46, 150–152 (2004). https://doi.org/10.1134/1.1641942

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  • DOI: https://doi.org/10.1134/1.1641942

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