Abstract
The electronic transport and response in the terahertz range are studied in field-effect GaAs/AlGaAs transistors with a two-dimensional high-mobility electron gas. The special interest expressed in such transistors stems from the possibility of developing terahertz-range radiation detectors and generators on the basis of these devices. Measurements of the value and the magnetic-field dependence of the drain-source resistance are used to estimate the electron density and mobility in the transistor channel. Results of magnetotransport measurements are employed to interpret the nonresonant detection observed in transistors with a gate width from 0.8 to 2.5 µm.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 146–149.
Original Russian Text Copyright © 2004 by Antonov, Gavrilenko, Demidov, Morozov, Dubinov, Lusakowski, Knap, Dyakonova, Kaminska, Piotrowska, Golaszewska, Shur.
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Antonov, A.V., Gavrilenko, V.I., Demidov, E.V. et al. Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas. Phys. Solid State 46, 146–149 (2004). https://doi.org/10.1134/1.1641941
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DOI: https://doi.org/10.1134/1.1641941