Abstract
The submillimeter (ℏω=0.5–5 meV) magnetoabsorption spectra of strained Ge/Ge1−x Six(111) multilayer heterostructures with thick Ge layers (d Ge=300–850 Å, d GeSi≈200 Å, x≈0.1) are investigated at T=4.2 K upon band-gap optical excitation. It is revealed that the absorption spectra contain cyclotron resonance lines of 1L electrons localized in GeSi solid solution layers (unlike the previously studied structures with thin Ge layers as quantum wells for 3L electrons). The absorption spectra of the samples with thick Ge layers (d Ge=800–850 Å) exhibit cyclotron resonance lines of holes due to transitions from the lower Landau levels in the first quantum-well subband to the Landau levels belonging to the third and fifth higher subbands.
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References
L. K. Orlov, O. A. Kuznetsov, R. A. Rubtsova, et al., Solid State Phenom. 32–33, 469 (1993).
V. I. Gavrilenko, I. N. Kozlov, O. A. Kuznetsov, et al., Pis’ma Zh. Éksp. Teor. Fiz. 59(5), 327 (1994) [JETP Lett. 59, 348 (1994)].
C. M. Engelhardt, D. Tobben, M. Ashauer, et al., Solid-State Electron. 37, 949 (1994).
V. Ya. Aleshkin and N. A. Bekin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31(2), 171 (1997) [Semiconductors 31, 132 (1997)].
V. I. Gavrilenko, I. V. Erofeeva, A. L. Korotkov, et al., Pis’ma Zh. Éksp. Teor. Fiz. 65(2), 194 (1997) [JETP Lett. 65, 209 (1997)].
V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, et al., in Proceedings of the Workshop on Nanophotonics (IFM Ross. Akad. Nauk, Nizhni Novgorod, 1999), p. 114.
V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, et al., in Proceedings of the 6th International Symposium “Nanostructures: Physics and Technology,” St. Petersburg, Russia (1999), p. 356.
V. Ya. Aleshkin, V. L. Vaks, D. B. Veksler, et al., Izv. Akad. Nauk, Ser. Fiz. 64, 308 (2000).
V. Ya. Aleshkin, V. I. Gavrilenko, D. B. Veksler, and L. Reggiani, Phys. Rev. B 66, 155336 (2002).
J. C. Hensel and K. Suzuki, Phys. Rev. B 9(10), 4219 (1974).
G. L. Bir and G. E. Pikus, Symmetry and Stain-Induced Effects in Semiconductors (Nauka, Moscow, 1972; Wiley, New York, 1975).
F. Stern and W. E. Howard, Phys. Rev. 163(3), 816 (1967).
V. Ya. Aleshkin, A. V. Antonov, D. B. Veksler, et al., in Proceedings of the Workshop on Nanophotonics (IFM Ross. Akad. Nauk, Nizhni Novgorod, 2003), p. 248.
V. Ya. Aleshkin, D. B. Veksler, V. I. Gavrilenko, et al., Fiz. Tverd. Tela (St. Petersburg) 46(1), 126 (2004) [Phys. Solid State 46, 125 (2004)].
S. R. Ryu, Z. X. Jiang, W. J. Li, et al., Phys. Rev. B 54(16), R11086 (1996).
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 131–137.
Original Russian Text Copyright © 2004 by Aleshkin, Veksler, Gavrilenko, Erofeeva, Ikonnikov, Kozlov, Kuznetsov.
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Aleshkin, V.Y., Veksler, D.B., Gavrilenko, V.I. et al. Intersubband cyclotron resonance of holes in strained Ge/GeSi(111) heterostructures with germanium wide quantum wells and cyclotron resonance of 1L electrons in GeSi layers. Phys. Solid State 46, 130–137 (2004). https://doi.org/10.1134/1.1641939
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DOI: https://doi.org/10.1134/1.1641939