Abstract
Erbium-doped epitaxial silicon layers were grown using two different growth techniques, namely, commonly used molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE). It is shown that an erbium-doped silicon epitaxial layer deposited through SPE on a cold substrate and subsequently annealed displays amore intense photoluminescence at a wavelength of 1.54 µm than do MBE-grown layers.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 102–104.
Original Russian Text Copyright © 2004 by Shengurov, Svetlov, Chalkov, Andreev, Krasil’nik, Kryzhkov.
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Shengurov, V.G., Svetlov, S.P., Chalkov, V.Y. et al. Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy. Phys. Solid State 46, 101–103 (2004). https://doi.org/10.1134/1.1641932
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DOI: https://doi.org/10.1134/1.1641932