Abstract
Excitation spectra of erbium photoluminescence (λ=1540 nm) in Si: Er epitaxial structures were studied within a broad pump wavelength range (λ=780–1500 nm). Erbium photoluminescence was observed to occur at pump energies substantially less than the silicon band-gap width. Possible mechanisms of erbium ion excitation in this pump radiation energy region are discussed.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 98–101.
Original Russian Text Copyright © 2004 by Andreev, Krasil’nik, Kryzhkov, Yablonski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Kuznetsov, Gregorkiewicz, Klik.
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Andreev, B.A., Krasil’nik, Z.F., Kryzhkov, D.I. et al. Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures. Phys. Solid State 46, 97–100 (2004). https://doi.org/10.1134/1.1641931
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DOI: https://doi.org/10.1134/1.1641931