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The role of microstructure in luminescent properties of Er-doped nanocrystalline Si thin films

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

In this contribution, we present a structural and photoluminescence (PL) analysis of Er-doped nanocrystalline silicon thin films produced by rf magnetron sputtering method. We show the strong influence of the presence of nanocrystalline fraction in films on their luminescence efficiency at 1.54 µm studied on a series of specially prepared samples with different crystallinity, i.e., percentage and sizes of Si nanocrystals. A strong increase, by about two orders of magnitude, of Er-related PL intensity in these samples with lowering of the Si nanocrystal sizes from 7.9 to about 1.5 nm is observed. The results are discussed in terms of the sensitization effect of Si nanocrystals on Er ions.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    M. V. Stepikhova

  2. Departamento de Física, Universidade do Minho, Campus de Gualtar, Braga, 4710-057, Portugal

    M. F. Cerqueira

  3. Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, via Orabona, Bari, 4-70126, Italy

    M. Losurdo & M. M. Giangregorio

  4. Instituto Técnico Nuclear ITN, EN 10, Sacavém, 2686-953, Portugal

    E. Alves

  5. Departamento de Física, Universidade de Aveiro, Campus de Santiago, Aveiro, 3700, Portugal

    T. Monteiro & M. J. Soares

Authors
  1. M. V. Stepikhova
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  2. M. F. Cerqueira
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  3. M. Losurdo
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  4. M. M. Giangregorio
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  5. E. Alves
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  6. T. Monteiro
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  7. M. J. Soares
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Additional information

From Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 114–118.

Original English Text Copyright © 2004 by Stepikhova, Cerqueira, Losurdo, Giangregorio, Alves, Monteiro, Soares.

This article was submitted by the authors in English.

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Stepikhova, M.V., Cerqueira, M.F., Losurdo, M. et al. The role of microstructure in luminescent properties of Er-doped nanocrystalline Si thin films. Phys. Solid State 46, 113–117 (2004). https://doi.org/10.1134/1.1641935

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  • DOI: https://doi.org/10.1134/1.1641935

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