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Photoluminescence and structural defects in silicon layers implanted by iron ions

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

The photoluminescence spectra of silicon samples implanted by 56Fe+ ions [energy, 170 keV; dose, 1×1016, (2–4)×1017 cm−2] and annealed at temperatures of 800, 900, and 1000°C are measured. The structure of the samples at each stage of treatment is investigated using transmission electron microscopy (TEM). It is found that the phase formation and morphology of crystalline iron disilicide precipitates depend on the dose of iron ions and the annealing temperature. A comparison of the dependences of the intensity and spectral distribution of the photoluminescence on the measurement temperature, annealing temperature, and morphology of the FeSi2 phase revealed the dislocation nature of photoluminescence.

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Authors and Affiliations

  1. Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    É. A. Shteinman & A. N. Izotov

  2. Institute for Chemical Problems of Microelectronics, B. Tolmachevskii per. 5, Moscow, 109017, Russia

    V. I. Vdovin

  3. Moscow State Institute of Steel and Alloys, Leninskii pr. 4, Moscow, 117936, Russia

    Yu. N. Parkhomenko & A. F. Borun

Authors
  1. É. A. Shteinman
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  2. V. I. Vdovin
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  3. A. N. Izotov
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  4. Yu. N. Parkhomenko
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  5. A. F. Borun
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 26–30.

Original Russian Text Copyright © 2004 by Shte\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)nman, Vdovin, Izotov, Parkhomenko, Borun.

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Shteinman, É.A., Vdovin, V.I., Izotov, A.N. et al. Photoluminescence and structural defects in silicon layers implanted by iron ions. Phys. Solid State 46, 22–26 (2004). https://doi.org/10.1134/1.1641913

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  • DOI: https://doi.org/10.1134/1.1641913

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