Abstract
Multilayer Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures (250–300°C) of germanium deposition are studied using photoluminescence and atomic-force microscopy (AFM). It is assumed that, upon low-temperature epitaxy, the wetting layer is formed through the intergrowth of two-dimensional (2D) and three-dimensional (3D) nanoislands.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 74–76.
Original Russian Text Copyright © 2004 by Burbaev, Kurbatov, Pogosov, Rzaev, Sibel’din, Tsvetkov.
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Burbaev, T.M., Kurbatov, V.A., Pogosov, A.O. et al. Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures. Phys. Solid State 46, 71–73 (2004). https://doi.org/10.1134/1.1641924
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DOI: https://doi.org/10.1134/1.1641924